STB55NE06L n - channel enhancement mode " single feature size ? " power mosfet preliminary data n typical r ds(on) = 0.018 w n exceptional dv/dt capability n 100% avalanche tested n low gate charge 100 o c n application oriented characterization n for through-hole version contact sales office description this power mosfet is the latest development of sgs-thomson unique "single feature size ? " strip-based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications n high current, high speed switching n solenoid and relay drivers n motor control, audio amplifiers n dc-dc & dc-ac converters n automotive environment (injection, abs, air-bag, lampdrivers, etc. ) internal schematic diagram march 1998 1 3 d 2 pak to-263 (suffix "t4") absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v dgr drain- gate voltage (r gs = 20 k w ) 60 v v gs gate-source voltage 15 v i d drain current (continuous) at t c = 25 o c55a i d drain current (continuous) at t c = 100 o c39a i dm ( ) drain current (pulsed) 220 a p tot total dissipation at t c = 25 o c130w derating factor 0.86 w/ o c dv/dt peak diode recovery voltage slope 7 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ) pulse width limited by safe operating area ( 1 ) i sd 55 a, di/dt 300 a/ m s, v dd v (br)dss , t j t jmax type v dss r ds(on) i d STB55NE06L 60 v < 0.022 w 55a 1/5 .com .com .com .com 4 .com u datasheet
thermal data r thj-case rthj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 1.15 62.5 0.5 300 o c/w oc/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 55 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 15 v) 250 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c =125 o c 1 10 m a m a i gss gate-body leakage current (v ds = 0) v gs = 15 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 1 1.7 2.5 v r ds(on) static drain-source on resistance v gs = 5 v i d = 27.5 a v gs = 10 v i d = 27.5 a 0.022 0.019 0.028 0.022 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 55 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d =27.5 a 20 30 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 2800 375 100 3750 500 140 pf pf pf STB55NE06L 2/5 .com .com .com .com .com 4 .com u datasheet
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 30 v i d = 27.5 a r g =4.7 w v gs = 5 v 40 100 55 140 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 48 v i d = 55 a v gs = 5 v 40 13 20 55 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 48 v i d = 55 a r g =4.7 w v gs = 5 v 25 40 65 35 55 90 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 55 220 a a v sd ( * ) forward on voltage i sd = 55 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 55 a di/dt = 100 a/ m s v dd = 30 v t j = 150 o c 65 180 5.5 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area STB55NE06L 3/5 .com .com .com .com .com 4 .com u datasheet
dim. mm inch min. typ. max. min. typ. max. a 4.3 4.6 0.169 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.25 1.4 0.049 0.055 c 0.45 0.6 0.017 0.023 c2 1.21 1.36 0.047 0.053 d 8.95 9.35 0.352 0.368 e 10 10.28 0.393 0.404 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 l2 l3 l b2 b g e a c2 d c a1 p011p6/c to-263 (d 2 pak) mechanical data STB55NE06L 4/5 .com .com .com .com .com 4 .com u datasheet
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsa bility for the consequences of use of such information nor for any infringement of patents or other rights of third part ies which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication su persedes and replaces all information previously supplied. sgs-thomson microelec tronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-t homson microe lectonics. ? 1998 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelec tronics gr oup of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - morocco - the neth erlands - singapore - spain - sweden - switzerland - t aiwan - thailand - united kingdom - u.s.a . . . STB55NE06L 5/5 .com .com .com .com 4 .com u datasheet
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